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This is SiC N-Channel MOSFET Module 75 A 1200 V AG-EASY1B-2 manufactured by Infineon. The manufacturer part number is F415MR12W2M1B76BOMA1. It has a maximum of 1200 v drain source voltage. While 75 a of maximum continuous drain current. The product is available in screw mount configuration. The product f4, is a highly preferred choice for users. The transistor is manufactured from highly durable sic material. The product carries 5.55v of maximum gate threshold voltage. The package is a sort of ag-easy2b. It consists of 4 elements per chip. The product is available in [Cannel Type] channel. It provides up to 0.015 ω maximum drain source resistance.
For more information please check the datasheets.
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