N-Channel MOSFET, 238 A, 40 V, 8-Pin PG-TDSON-8 FL Infineon ISC012N04LM6ATMA1

ISC012N04LM6ATMA1 N-Channel MOSFET, 238 A, 40 V, 8-Pin PG-TDSON-8 FL Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
40 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
OptiMOS™
Channel Type:
N
Maximum Gate Threshold Voltage:
3.8V
Maximum Drain Source Resistance:
0.0012 Ω
Package Type:
TDSON-8 FL
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
238 A
Pin Count:
8
RoHs Compliant
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This is N-Channel MOSFET 238 A 40 V 8-Pin PG-TDSON-8 FL manufactured by Infineon. The manufacturer part number is ISC012N04LM6ATMA1. It has a maximum of 40 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.8v of maximum gate threshold voltage. It provides up to 0.0012 ω maximum drain source resistance. The package is a sort of tdson-8 fl. It consists of 1 elements per chip. While 238 a of maximum continuous drain current. It contains 8 pins.

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Datasheet - ISC012N04LM6ATMA1(Technical Reference)

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