N-Channel MOSFET, 288 A, 60 V, 8-Pin PG-TDSON-FL-8 Infineon ISC011N06LM5ATMA1

ISC011N06LM5ATMA1 N-Channel MOSFET, 288 A, 60 V, 8-Pin PG-TDSON-FL-8 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
60 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
OptiMOS™
Channel Type:
N
Maximum Gate Threshold Voltage:
2.3V
Maximum Drain Source Resistance:
0.00115 Ω
Package Type:
SuperSO8 5 x 6
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
288 A
Pin Count:
8
RoHs Compliant
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This is N-Channel MOSFET 288 A 60 V 8-Pin PG-TDSON-FL-8 manufactured by Infineon. The manufacturer part number is ISC011N06LM5ATMA1. It has a maximum of 60 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.3v of maximum gate threshold voltage. It provides up to 0.00115 ω maximum drain source resistance. The package is a sort of superso8 5 x 6. It consists of 1 elements per chip. While 288 a of maximum continuous drain current. It contains 8 pins.

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Datasheet - ISC011N06LM5ATMA1(Technical Reference)

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