N-Channel MOSFET, 56 A, 60 V, 8-Pin PQFN 3.3 x 3.3 Infineon ISZ0703NLSATMA1

ISZ0703NLSATMA1 N-Channel MOSFET, 56 A, 60 V, 8-Pin PQFN 3.3 x 3.3 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
60 V
Maximum Continuous Drain Current:
56 A
Mounting Type:
Surface Mount
Series:
OptiMOS™ 5
Channel Type:
N
Maximum Gate Threshold Voltage:
2.3V
Maximum Drain Source Resistance:
0.0073 O, 0.0092 O
Package Type:
PQFN 3 x 3
Number of Elements per Chip:
1
Transistor Material:
Si
Pin Count:
8
RoHs Compliant
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This is N-Channel MOSFET 56 A 60 V 8-Pin PQFN 3.3 x 3.3 manufactured by Infineon. The manufacturer part number is ISZ0703NLSATMA1. It has a maximum of 60 v drain source voltage. While 56 a of maximum continuous drain current. The product is available in surface mount configuration. The product optimos™ 5, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.3v of maximum gate threshold voltage. It provides up to 0.0073 o, 0.0092 o maximum drain source resistance. The package is a sort of pqfn 3 x 3. It consists of 1 elements per chip. The transistor is manufactured from highly durable si material. It contains 8 pins.

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Datasheet - ISZ0703NLSATMA1(Technical Reference)

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