N-Channel MOSFET, 59 A, 100 V, 8-Pin SO8 Infineon ISC0804NLSATMA1

ISC0804NLSATMA1 N-Channel MOSFET, 59 A, 100 V, 8-Pin SO8 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
100 V
Maximum Continuous Drain Current:
59 A
Mounting Type:
Surface Mount
Series:
OptiMOS™ 5
Channel Type:
N
Maximum Gate Threshold Voltage:
2.3V
Maximum Drain Source Resistance:
0.0109 O, 0.0149 O
Package Type:
SuperSO8 5 x 6
Number of Elements per Chip:
1
Transistor Material:
Si
Pin Count:
8
RoHs Compliant
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This is N-Channel MOSFET 59 A 100 V 8-Pin SO8 manufactured by Infineon. The manufacturer part number is ISC0804NLSATMA1. It has a maximum of 100 v drain source voltage. While 59 a of maximum continuous drain current. The product is available in surface mount configuration. The product optimos™ 5, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.3v of maximum gate threshold voltage. It provides up to 0.0109 o, 0.0149 o maximum drain source resistance. The package is a sort of superso8 5 x 6. It consists of 1 elements per chip. The transistor is manufactured from highly durable si material. It contains 8 pins.

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Datasheet - ISC0804NLSATMA1(Technical Reference)

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