N-Channel 200 V (D-S) MOSFET

SUP90100E-GE3 N-Channel 200 V (D-S) MOSFET
Vishay

Product Information

Maximum Drain Source Voltage:
200 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
TrenchFET
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.0109 Ω
Package Type:
TO-220
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
150 A
Transistor Material:
Si
Pin Count:
3
RoHs Compliant
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This is N-Channel 200 V (D-S) MOSFET manufactured by Vishay. The manufacturer part number is SUP90100E-GE3. It has a maximum of 200 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product trenchfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.0109 ω maximum drain source resistance. The package is a sort of to-220. It consists of 2 elements per chip. While 150 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.

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Datasheet - SUP90100E-GE3(Technical Reference)

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FAQs

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You will get a confirmation email regarding your order of N-Channel 200 V (D-S) MOSFET. You can also check on our website or by contacting our customer support team for further order details on N-Channel 200 V (D-S) MOSFET.
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