Automotive P-Channel 100 V MOSFET

SQJ211ELP-T1_GE3 Automotive P-Channel 100 V MOSFET
Vishay

Product Information

Maximum Drain Source Voltage:
100 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
TrenchFET
Channel Type:
P
Maximum Gate Threshold Voltage:
2.5V
Maximum Drain Source Resistance:
0.03 Ω
Package Type:
PowerPAK SO-8L
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
33.6 A
Transistor Material:
Si
Pin Count:
4
RoHs Compliant
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This is Automotive P-Channel 100 V MOSFET manufactured by Vishay. The manufacturer part number is SQJ211ELP-T1_GE3. It has a maximum of 100 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product trenchfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.5v of maximum gate threshold voltage. It provides up to 0.03 ω maximum drain source resistance. The package is a sort of powerpak so-8l. It consists of 1 elements per chip. While 33.6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 4 pins.

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Datasheet - SQJ211ELP-T1_GE3(Technical Reference)

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