Name: SiZF906BDT-T1-GE3, Vishay
Brand: Vishay
SKU: ET22535425
Price: 0.59 GBP
Availability: InStock

SiZF906BDT-T1-GE3 Dual N-Channel 30 V (D-S) MOSFET

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Product Information

Maximum Drain Source Voltage:

30 V

Mounting Type:

Surface Mount

Channel Mode:

Enhancement

Series:

TrenchFET

Channel Type:

Maximum Gate Threshold Voltage:

2.2V

Maximum Drain Source Resistance:

0.0021 Ω

Package Type:

PowerPAIR 6 x 5F

Number of Elements per Chip:

Maximum Continuous Drain Current:

257 A

Transistor Material:

Pin Count:

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This is Dual N-Channel 30 V (D-S) MOSFET manufactured by Vishay. The manufacturer part number is SiZF906BDT-T1-GE3. It has a maximum of 30 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product trenchfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.2v of maximum gate threshold voltage. It provides up to 0.0021 ω maximum drain source resistance. The package is a sort of powerpair 6 x 5f. It consists of 2 elements per chip. While 257 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 8 pins.

Datasheet - SiZF906BDT-T1-GE3(Technical Reference)

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You can order Vishay brand products with SiZF906BDT-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.

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Dual N-Channel 30 V (D-S) MOSFET

SiZF906BDT-T1-GE3

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