Name: SiZ340BDT-T1-GE3, Vishay
Brand: Vishay
SKU: ET22535424
Price: 0.20 GBP
Availability: InStock

SiZ340BDT-T1-GE3 Dual N-Channel 30-V (D-S) MOSFET

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Product Information

Maximum Drain Source Voltage:

30 V

Mounting Type:

Surface Mount

Channel Mode:

Enhancement

Series:

TrenchFET

Channel Type:

Maximum Gate Threshold Voltage:

2.4V

Maximum Drain Source Resistance:

0.00856 Ω

Package Type:

PowerPAIR 3 x 3S

Number of Elements per Chip:

Maximum Continuous Drain Current:

69.3 A

Transistor Material:

Pin Count:

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This is Dual N-Channel 30-V (D-S) MOSFET manufactured by Vishay. The manufacturer part number is SiZ340BDT-T1-GE3. It has a maximum of 30 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product trenchfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.4v of maximum gate threshold voltage. It provides up to 0.00856 ω maximum drain source resistance. The package is a sort of powerpair 3 x 3s. It consists of 2 elements per chip. While 69.3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 8 pins.

Datasheet - SiZ340BDT-T1-GE3(Technical Reference)

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You can order Vishay brand products with SiZ340BDT-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.

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You will get a confirmation email regarding your order of Dual N-Channel 30-V (D-S) MOSFET. You can also check on our website or by contacting our customer support team for further order details on Dual N-Channel 30-V (D-S) MOSFET.

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Dual N-Channel 30-V (D-S) MOSFET

SiZ340BDT-T1-GE3

Product Information

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