N-Channel 45 V (D-S) MOSFET

SiR450DP-T1-RE3 N-Channel 45 V (D-S) MOSFET
Vishay

Product Information

Maximum Drain Source Voltage:
45 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
TrenchFET
Channel Type:
N
Maximum Gate Threshold Voltage:
2.3V
Maximum Drain Source Resistance:
0.0018 Ω
Package Type:
PowerPAK SO-8
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
113 A
Transistor Material:
Si
Pin Count:
8
RoHs Compliant
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This is N-Channel 45 V (D-S) MOSFET manufactured by Vishay. The manufacturer part number is SiR450DP-T1-RE3. It has a maximum of 45 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product trenchfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.3v of maximum gate threshold voltage. It provides up to 0.0018 ω maximum drain source resistance. The package is a sort of powerpak so-8. It consists of 2 elements per chip. While 113 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 8 pins.

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Datasheet - SiR450DP-T1-RE3(Technical Reference)

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