N-Channel 45 V (D-S) MOSFET

SiJ450DP-T1-GE3 N-Channel 45 V (D-S) MOSFET
Vishay

Product Information

Maximum Drain Source Voltage:
45 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
TrenchFET
Channel Type:
N
Maximum Gate Threshold Voltage:
2.3V
Maximum Drain Source Resistance:
0.0019 Ω
Package Type:
PowerPAK SO-8L
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
113 A
Transistor Material:
Si
Pin Count:
4
RoHs Compliant
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This is N-Channel 45 V (D-S) MOSFET manufactured by Vishay. The manufacturer part number is SiJ450DP-T1-GE3. It has a maximum of 45 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product trenchfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.3v of maximum gate threshold voltage. It provides up to 0.0019 ω maximum drain source resistance. The package is a sort of powerpak so-8l. It consists of 1 elements per chip. While 113 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 4 pins.

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Datasheet - SiJ450DP-T1-GE3(Technical Reference)

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