Name: SiHP17N80AEF-GE3, Vishay
Brand: Vishay
SKU: ET22535395
Price: 1.31 GBP
Availability: InStock

(0)

Product Information

Maximum Drain Source Voltage:

850 V

Mounting Type:

Through Hole

Channel Mode:

Enhancement

Series:

E Series

Channel Type:

Maximum Gate Threshold Voltage:

Maximum Drain Source Resistance:

0.305 Ω

Package Type:

TO-220AB

Number of Elements per Chip:

Maximum Continuous Drain Current:

15 A

Transistor Material:

Pin Count:

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This is E Series Power MOSFET manufactured by Vishay. The manufacturer part number is SiHP17N80AEF-GE3. It has a maximum of 850 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product e series, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.305 ω maximum drain source resistance. The package is a sort of to-220ab. It consists of 1 elements per chip. While 15 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.

Datasheet - SiHP17N80AEF-GE3(Technical Reference)

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You can order Vishay brand products with SiHP17N80AEF-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.

Yes. Our products in MOSFETs category are shipped in lowest possible time.

You will get a confirmation email regarding your order of E Series Power MOSFET. You can also check on our website or by contacting our customer support team for further order details on E Series Power MOSFET.

E Series Power MOSFET

SiHP17N80AEF-GE3

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