E Series Power MOSFET DPAK

SIHD11N80AE-T1-GE3 E Series Power MOSFET DPAK
Vishay

Product Information

Maximum Drain Source Voltage:
850 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
E Series
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.45 Ω
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
8 A
Transistor Material:
Si
Pin Count:
3
RoHs Compliant
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This is E Series Power MOSFET DPAK manufactured by Vishay. The manufacturer part number is SIHD11N80AE-T1-GE3. It has a maximum of 850 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product e series, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.45 ω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. While 8 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.

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Datasheet - SIHD11N80AE-T1-GE3(Technical Reference)

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