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This is E Series Power MOSFET manufactured by Vishay. The manufacturer part number is SIHB120N60E-T1-GE3. It has a maximum of 650 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product e series, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5v of maximum gate threshold voltage. It provides up to 0.12 ω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 2 elements per chip. While 25 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.
For more information please check the datasheets.
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