E Series Power MOSFET

SIHB120N60E-T1-GE3 E Series Power MOSFET
Vishay

Product Information

Maximum Drain Source Voltage:
650 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
E Series
Channel Type:
N
Maximum Gate Threshold Voltage:
5V
Maximum Drain Source Resistance:
0.12 Ω
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
25 A
Transistor Material:
Si
Pin Count:
3
RoHs Compliant
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This is E Series Power MOSFET manufactured by Vishay. The manufacturer part number is SIHB120N60E-T1-GE3. It has a maximum of 650 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product e series, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 5v of maximum gate threshold voltage. It provides up to 0.12 ω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 2 elements per chip. While 25 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.

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Datasheet - SIHB120N60E-T1-GE3(Technical Reference)

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