Dual N-Channel 20-V (D-S) MOSFET

SIA938DJT-T1-GE3 Dual N-Channel 20-V (D-S) MOSFET
Vishay

Product Information

Maximum Drain Source Voltage:
20 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
TrenchFET
Channel Type:
N
Maximum Gate Threshold Voltage:
1.5V
Maximum Drain Source Resistance:
0.0215 Ω
Package Type:
PowerPAK SC-70-6L Dual
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
4.5 A
Transistor Material:
Si
Pin Count:
8
RoHs Compliant
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This is Dual N-Channel 20-V (D-S) MOSFET manufactured by Vishay. The manufacturer part number is SIA938DJT-T1-GE3. It has a maximum of 20 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product trenchfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 1.5v of maximum gate threshold voltage. It provides up to 0.0215 ω maximum drain source resistance. The package is a sort of powerpak sc-70-6l dual. It consists of 2 elements per chip. While 4.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 8 pins.

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Datasheet - SIA938DJT-T1-GE3(Technical Reference)

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