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This is manufactured by onsemi. The manufacturer part number is NTH4L022N120M3S. It has a maximum of 1200 v drain source voltage. While 68 a of maximum continuous drain current. The product is available in through hole configuration. The transistor is manufactured from highly durable sic material. The product carries 4.4v of maximum gate threshold voltage. It provides up to 0.03 ω maximum drain source resistance. The package is a sort of to-247-4l. It consists of 1 elements per chip. The product is available in [Cannel Type] channel. It contains 4 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.4v @ 20ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-247-4. It has a maximum Rds On and voltage of 30mohm @ 40a, 18v. The maximum gate charge and given voltages include 151 nc @ 18 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 18v. It is shipped in tube package . The product has a 1200 v drain to source voltage. The maximum Vgs rate is +22v, -10v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 352w (tc). The product's input capacitance at maximum includes 3175 pf @ 800 v. It has a long 26 weeks standard lead time. to-247-4l is the supplier device package value. The continuous current drain at 25°C is 68a (tc). This product use sicfet (silicon carbide) technology. The product is designated with the ear99 code number.
For more information please check the datasheets.
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