onsemi NTPF165N65S3H

NTPF165N65S3H onsemi
NTPF165N65S3H
onsemi

Product Information

Maximum Drain Source Voltage:
650 V
Maximum Continuous Drain Current:
19 A
Mounting Type:
Through Hole
Series:
SUPERFET III
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.165 Ω
Package Type:
TO-220
Number of Elements per Chip:
1
Pin Count:
3
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
165mOhm @ 9.5A, 10V
title:
NTPF165N65S3H
Vgs(th) (Max) @ Id:
4V @ 1.6mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
33W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1808 pF @ 400 V
Mounting Type:
Through Hole
Series:
SuperFET® III
Gate Charge (Qg) (Max) @ Vgs:
35 nC @ 10 V
Supplier Device Package:
TO-220FP
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
19A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
RoHs Compliant
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This is manufactured by onsemi. The manufacturer part number is NTPF165N65S3H. It has a maximum of 650 v drain source voltage. While 19 a of maximum continuous drain current. The product is available in through hole configuration. The product superfet iii, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.165 ω maximum drain source resistance. The package is a sort of to-220. It consists of 1 elements per chip. It contains 3 pins. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 165mohm @ 9.5a, 10v. The typical Vgs (th) (max) of the product is 4v @ 1.6ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 33w (tc). The product's input capacitance at maximum includes 1808 pf @ 400 v. The product superfet® iii, is a highly preferred choice for users. The maximum gate charge and given voltages include 35 nc @ 10 v. to-220fp is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 19a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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Datasheet - NTPF165N65S3H(Technical Reference)
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Assembly and Test Qualification 26/Jul/2023(PCN Assembly/Origin)
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NTPF165N65S3H(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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