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This is manufactured by onsemi. The manufacturer part number is NTMFS7D8N10GTWG. It has a maximum of 100 v drain source voltage. While 110 a of maximum continuous drain current. The product is available in surface mount configuration. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.0076 ω maximum drain source resistance. The package is a sort of pqfn 5 x 6. It consists of 1 elements per chip. It contains 8 pins. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 7.6mohm @ 48a, 10v. The typical Vgs (th) (max) of the product is 4v @ 254µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3w (ta), 187w (tc). It has a long 20 weeks standard lead time. The product's input capacitance at maximum includes 6180 pf @ 50 v. The maximum gate charge and given voltages include 92 nc @ 10 v. 8-pqfn (5x6) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 14a (ta), 110a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
For more information please check the datasheets.
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