Maximum Drain Source Voltage:
650 V
Maximum Continuous Drain Current:
10 A
Mounting Type:
Surface Mount
Series:
SUPERFET III
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.36 Ω
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Pin Count:
3
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
360mOhm @ 5A, 10V
title:
NTD360N65S3H
Vgs(th) (Max) @ Id:
4V @ 700µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
83W (Tc)
standardLeadTime:
22 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
916 pF @ 400 V
Mounting Type:
Surface Mount
Series:
SuperFET® III
Gate Charge (Qg) (Max) @ Vgs:
17.5 nC @ 10 V
Supplier Device Package:
TO-252 (DPAK)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
