Maximum Drain Source Voltage:
100 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
SiC Power
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.0041 Ω
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
203 A
Transistor Material:
SiC
Pin Count:
7
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-7, D2PAK (6 Leads + Tab)
Rds On (Max) @ Id, Vgs:
4.1mOhm @ 100A, 10V
title:
NTBGS004N10G
Vgs(th) (Max) @ Id:
4V @ 500µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.7W (Ta), 340W (Tc)
standardLeadTime:
22 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
12100 pF @ 50 V
Mounting Type:
Surface Mount
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
178 nC @ 10 V
Supplier Device Package:
TO-263 (D2PAK)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
21A (Ta), 203A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
