Maximum Drain Source Voltage:
650 V
Maximum Continuous Drain Current:
62 A
Mounting Type:
Surface Mount
Series:
SiC Power
Channel Type:
N
Maximum Gate Threshold Voltage:
4.3V
Maximum Drain Source Resistance:
0.05 Ω
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Transistor Material:
SiC
Pin Count:
7
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Rds On (Max) @ Id, Vgs:
50mOhm @ 25A, 18V
title:
NTBG045N065SC1
Vgs(th) (Max) @ Id:
4.3V @ 8mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
+22V, -8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
242W (Tc)
standardLeadTime:
17 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1890 pF @ 325 V
Mounting Type:
Surface Mount
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
105 nC @ 18 V
Supplier Device Package:
D2PAK-7
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
62A (Tc)
Technology:
SiCFET (Silicon Carbide)
ECCN:
EAR99
