onsemi NTBG045N065SC1

NTBG045N065SC1 onsemi
NTBG045N065SC1
onsemi

Product Information

Maximum Drain Source Voltage:
650 V
Maximum Continuous Drain Current:
62 A
Mounting Type:
Surface Mount
Series:
SiC Power
Channel Type:
N
Maximum Gate Threshold Voltage:
4.3V
Maximum Drain Source Resistance:
0.05 Ω
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Transistor Material:
SiC
Pin Count:
7
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Rds On (Max) @ Id, Vgs:
50mOhm @ 25A, 18V
title:
NTBG045N065SC1
Vgs(th) (Max) @ Id:
4.3V @ 8mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
+22V, -8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
242W (Tc)
standardLeadTime:
17 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1890 pF @ 325 V
Mounting Type:
Surface Mount
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
105 nC @ 18 V
Supplier Device Package:
D2PAK-7
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
62A (Tc)
Technology:
SiCFET (Silicon Carbide)
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by onsemi. The manufacturer part number is NTBG045N065SC1. It has a maximum of 650 v drain source voltage. While 62 a of maximum continuous drain current. The product is available in surface mount configuration. The product sic power, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.3v of maximum gate threshold voltage. It provides up to 0.05 ω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. The transistor is manufactured from highly durable sic material. It contains 7 pins. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-8, d2pak (7 leads + tab), to-263ca. It has a maximum Rds On and voltage of 50mohm @ 25a, 18v. The typical Vgs (th) (max) of the product is 4.3v @ 8ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 15v, 18v. The product has a 650 v drain to source voltage. The maximum Vgs rate is +22v, -8v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 242w (tc). It has a long 17 weeks standard lead time. The product's input capacitance at maximum includes 1890 pf @ 325 v. The maximum gate charge and given voltages include 105 nc @ 18 v. d2pak-7 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 62a (tc). This product use sicfet (silicon carbide) technology. The product is designated with the ear99 code number.

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Datasheet - NTBG045N065SC1(Technical Reference)
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NTBGxx 14/Dec/2022(PCN Assembly/Origin)
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NTBG045N065SC1(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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