N-Channel MOSFET, 5.1 A, 900 V, 3-Pin TO252-3 Infineon IPD90R1K2C3ATMA1

IPD90R1K2C3ATMA1 N-Channel MOSFET, 5.1 A, 900 V, 3-Pin TO252-3 Infineon

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Product Information

Maximum Drain Source Voltage:

900 V

Maximum Continuous Drain Current:

5.1 A

Mounting Type:

Surface Mount

Series:

CoolMOS™

Pin Count:

Maximum Gate Threshold Voltage:

3.5V

Maximum Drain Source Resistance:

1.2 Ω

Package Type:

TO-252

Number of Elements per Chip:

Channel Type:

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This is N-Channel MOSFET 5.1 A 900 V 3-Pin TO252-3 manufactured by Infineon. The manufacturer part number is IPD90R1K2C3ATMA1. It has a maximum of 900 v drain source voltage. While 5.1 a of maximum continuous drain current. The product is available in surface mount configuration. The product coolmos™, is a highly preferred choice for users. It contains 3 pins. The product carries 3.5v of maximum gate threshold voltage. It provides up to 1.2 ω maximum drain source resistance. The package is a sort of to-252. It consists of 1 elements per chip. The product is available in [Cannel Type] channel.

Datasheet - IPD90R1K2C3ATMA1(Technical Reference)

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You can order Infineon brand products with IPD90R1K2C3ATMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.

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You will get a confirmation email regarding your order of N-Channel MOSFET, 5.1 A, 900 V, 3-Pin TO252-3 Infineon IPD90R1K2C3ATMA1. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 5.1 A, 900 V, 3-Pin TO252-3 Infineon IPD90R1K2C3ATMA1.

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IPD90R1K2C3ATMA1

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