N-Channel MOSFET, 3.9 A, 800 V, 3-Pin DPAK Infineon IPD80R1K4CEATMA1

IPD80R1K4CEATMA1 N-Channel MOSFET, 3.9 A, 800 V, 3-Pin DPAK Infineon

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Product Information

Maximum Drain Source Voltage:

800 V

Maximum Continuous Drain Current:

3.9 A

Mounting Type:

Surface Mount

Series:

CoolMOS™ CE

Channel Type:

Maximum Gate Threshold Voltage:

3.9V

Maximum Drain Source Resistance:

1.4 Ω

Package Type:

DPAK (TO-252)

Number of Elements per Chip:

Pin Count:

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This is N-Channel MOSFET 3.9 A 800 V 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IPD80R1K4CEATMA1. It has a maximum of 800 v drain source voltage. While 3.9 a of maximum continuous drain current. The product is available in surface mount configuration. The product coolmos™ ce, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.9v of maximum gate threshold voltage. It provides up to 1.4 ω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. It contains 3 pins.

Datasheet - IPD80R1K4CEATMA1(Technical Reference)

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You can order Infineon brand products with IPD80R1K4CEATMA1 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.

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You will get a confirmation email regarding your order of N-Channel MOSFET, 3.9 A, 800 V, 3-Pin DPAK Infineon IPD80R1K4CEATMA1. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 3.9 A, 800 V, 3-Pin DPAK Infineon IPD80R1K4CEATMA1.

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IPD80R1K4CEATMA1

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