N-Channel MOSFET, 70 A, 120 V, 3-Pin DPAK Infineon IPD70N12S311ATMA1

IPD70N12S311ATMA1 N-Channel MOSFET, 70 A, 120 V, 3-Pin DPAK Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
120 V
Maximum Continuous Drain Current:
70 A
Mounting Type:
Surface Mount
Series:
OptiMOS™-T
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.0111 Ω
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 70 A 120 V 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IPD70N12S311ATMA1. It has a maximum of 120 v drain source voltage. While 70 a of maximum continuous drain current. The product is available in surface mount configuration. The product optimos™-t, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.0111 ω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 1 elements per chip. It contains 3 pins.

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Datasheet - IPD70N12S311ATMA1(Technical Reference)

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