N-Channel MOSFET, 10 A, 650 V, 3-Pin DPAK ON Semiconductor NTD360N65S3H

ON Semiconductor

Product Information

Maximum Drain Source Voltage:
650 V
Maximum Continuous Drain Current:
10 A
Mounting Type:
Surface Mount
Series:
SUPERFET III
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.36 Ω
Package Type:
DPAK
Number of Elements per Chip:
1
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 10 A 650 V 3-Pin DPAK manufactured by ON Semiconductor. The manufacturer part number is NTD360N65S3H. It has a maximum of 650 v drain source voltage. While 10 a of maximum continuous drain current. The product is available in surface mount configuration. The product superfet iii, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.36 ω maximum drain source resistance. The package is a sort of dpak. It consists of 1 elements per chip. It contains 3 pins.

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Datasheet - NTD360N65S3H(Technical Reference)

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FAQs

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You will get a confirmation email regarding your order of N-Channel MOSFET, 10 A, 650 V, 3-Pin DPAK ON Semiconductor NTD360N65S3H. You can also check on our website or by contacting our customer support team for further order details on N-Channel MOSFET, 10 A, 650 V, 3-Pin DPAK ON Semiconductor NTD360N65S3H.
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