Dual Silicon N-Channel MOSFET, 20 A, 40 V, 8-Pin SuperSO8 5x6 Infineon IPG20N04S4L11AATMA1

IPG20N04S4L11AATMA1 Dual Silicon N-Channel MOSFET, 20 A, 40 V, 8-Pin SuperSO8 5x6 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
40 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
OptiMOS™ -T2
Channel Type:
N
Maximum Gate Threshold Voltage:
2.2V
Maximum Drain Source Resistance:
0.0116 Ω
Package Type:
SuperSO8 5 x 6 Dual
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
20 A
Transistor Material:
Silicon
Pin Count:
8
RoHs Compliant
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This is Dual Silicon N-Channel MOSFET 20 A 40 V 8-Pin SuperSO8 5x6 manufactured by Infineon. The manufacturer part number is IPG20N04S4L11AATMA1. It has a maximum of 40 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™ -t2, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.2v of maximum gate threshold voltage. It provides up to 0.0116 ω maximum drain source resistance. The package is a sort of superso8 5 x 6 dual. It consists of 2 elements per chip. While 20 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 8 pins.

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Datasheet - IPG20N04S4L11AATMA1(Technical Reference)

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