Silicon P-Channel MOSFET, 180 A, 40 V, 7-Pin D2PAK 7pin Infineon IPB180P04P4L02ATMA2

IPB180P04P4L02ATMA2 Silicon P-Channel MOSFET, 180 A, 40 V, 7-Pin D2PAK 7pin Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
40 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
IPB
Channel Type:
P
Maximum Gate Threshold Voltage:
2.2V
Maximum Drain Source Resistance:
0.0024 Ω
Package Type:
D2PAK-7
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
180 A
Transistor Material:
Silicon
Pin Count:
7
RoHs Compliant
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This is Silicon P-Channel MOSFET 180 A 40 V 7-Pin D2PAK 7pin manufactured by Infineon. The manufacturer part number is IPB180P04P4L02ATMA2. It has a maximum of 40 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product ipb, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.2v of maximum gate threshold voltage. It provides up to 0.0024 ω maximum drain source resistance. The package is a sort of d2pak-7. It consists of 1 elements per chip. While 180 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 7 pins.

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Datasheet - IPB180P04P4L02ATMA2(Technical Reference)

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