Silicon P-Channel MOSFET, 120 A, 40 V, 3-Pin D2PAK Infineon IPB120P04P4L03ATMA2

IPB120P04P4L03ATMA2 Silicon P-Channel MOSFET, 120 A, 40 V, 3-Pin D2PAK Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
40 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
IPB
Channel Type:
P
Maximum Gate Threshold Voltage:
2.2V
Maximum Drain Source Resistance:
0.0031 Ω
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
120 A
Transistor Material:
Silicon
Pin Count:
3
RoHs Compliant
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This is Silicon P-Channel MOSFET 120 A 40 V 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB120P04P4L03ATMA2. It has a maximum of 40 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product ipb, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.2v of maximum gate threshold voltage. It provides up to 0.0031 ω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. While 120 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 3 pins.

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Datasheet - IPB120P04P4L03ATMA2(Technical Reference)

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