Silicon N-Channel MOSFET, 300 A, 80 V, 8-Pin HSOF-8 Infineon IAUT300N08S5N012ATMA2

IAUT300N08S5N012ATMA2 Silicon N-Channel MOSFET, 300 A, 80 V, 8-Pin HSOF-8 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
80 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
OptiMOS™ 5
Channel Type:
N
Maximum Gate Threshold Voltage:
3.8V
Maximum Drain Source Resistance:
0.0012 Ω
Package Type:
HSOF-8
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
300 A
Transistor Material:
Silicon
Pin Count:
8
RoHs Compliant
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This is Silicon N-Channel MOSFET 300 A 80 V 8-Pin HSOF-8 manufactured by Infineon. The manufacturer part number is IAUT300N08S5N012ATMA2. It has a maximum of 80 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™ 5, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.8v of maximum gate threshold voltage. It provides up to 0.0012 ω maximum drain source resistance. The package is a sort of hsof-8. It consists of 1 elements per chip. While 300 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 8 pins.

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Datasheet - IAUT300N08S5N012ATMA2(Technical Reference)

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