N-Channel MOSFET, 137.5 A, 80 V, 8-Pin PowerPAK SO-8 Vishay SIR5802DP-T1-RE3

SIR5802DP-T1-RE3 N-Channel MOSFET, 137.5 A, 80 V, 8-Pin PowerPAK SO-8 Vishay
Vishay

Product Information

Maximum Drain Source Voltage:
80 V
Maximum Continuous Drain Current:
137.5 A
Mounting Type:
Surface Mount
Series:
N-Channel 80 V
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.004 Ω
Package Type:
PowerPAK SO-8
Number of Elements per Chip:
1
Pin Count:
8
RoHs Compliant
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This is N-Channel MOSFET 137.5 A 80 V 8-Pin PowerPAK SO-8 manufactured by Vishay. The manufacturer part number is SIR5802DP-T1-RE3. It has a maximum of 80 v drain source voltage. While 137.5 a of maximum continuous drain current. The product is available in surface mount configuration. The product n-channel 80 v, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.004 ω maximum drain source resistance. The package is a sort of powerpak so-8. It consists of 1 elements per chip. It contains 8 pins.

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Datasheet - SIR5802DP-T1-RE3(Technical Reference)

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