N-Channel MOSFET, 4.4 A, 800 V, 3-Pin TO-220AB Vishay SIHP5N80AE-GE3

SIHP5N80AE-GE3 N-Channel MOSFET, 4.4 A, 800 V, 3-Pin TO-220AB Vishay
Vishay

Product Information

Maximum Drain Source Voltage:
800 V
Maximum Continuous Drain Current:
4.4 A
Mounting Type:
Through Hole
Series:
E-Series
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
1.35 Ω
Package Type:
TO-220AB
Number of Elements per Chip:
1
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 4.4 A 800 V 3-Pin TO-220AB manufactured by Vishay. The manufacturer part number is SIHP5N80AE-GE3. It has a maximum of 800 v drain source voltage. While 4.4 a of maximum continuous drain current. The product is available in through hole configuration. The product e-series, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 1.35 ω maximum drain source resistance. The package is a sort of to-220ab. It consists of 1 elements per chip. It contains 3 pins.

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Datasheet - SIHP5N80AE-GE3(Technical Reference)

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