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This is Dual N-Channel MOSFET 6 A 600 V 3-Pin DPAK-3 manufactured by STMicroelectronics. The manufacturer part number is STD9N60M6. It has a maximum of 600 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The product carries 4.75v of maximum gate threshold voltage. It provides up to 0.75 ω maximum drain source resistance. The package is a sort of dpak (to-252). It consists of 2 elements per chip. While 6 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 750mohm @ 3a, 10v. The maximum gate charge and given voltages include 10 nc @ 10 v. The typical Vgs (th) (max) of the product is 4.75v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±25v. It has a long 14 weeks standard lead time. The product's input capacitance at maximum includes 273 pf @ 100 v. to-252 (dpak) is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 6a (tc). The product carries maximum power dissipation 76w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to std9, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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