N-Channel MOSFET, 190 mA, 100 V Depletion, 4-Pin PG-SOT223-4 Infineon BSS123IXTSA1

BSS123IXTSA1 N-Channel MOSFET, 190 mA, 100 V Depletion, 4-Pin PG-SOT223-4 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
100 V
Mounting Type:
Surface Mount
Channel Mode:
Depletion
Series:
OptiMOS™
Channel Type:
N
Maximum Gate Threshold Voltage:
1.8V
Package Type:
SOT-223
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
190 mA
Pin Count:
4
RoHs Compliant
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This is N-Channel MOSFET 190 mA 100 V Depletion 4-Pin PG-SOT223-4 manufactured by Infineon. The manufacturer part number is BSS123IXTSA1. It has a maximum of 100 v drain source voltage. The product is available in surface mount configuration. The product carries depletion channel mode. The product optimos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 1.8v of maximum gate threshold voltage. The package is a sort of sot-223. It consists of 1 elements per chip. While 190 ma of maximum continuous drain current. It contains 4 pins.

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Datasheet-BSS123IXTSA1(Technical Reference)

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