Dual N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON

IPG20N06S2L65AATMA1 Dual N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON
Infineon

Product Information

Maximum Drain Source Voltage:
55 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
OptiMOS™
Channel Type:
N
Maximum Gate Threshold Voltage:
2.2V
Maximum Drain Source Resistance:
0.065 Ω
Package Type:
TDSON
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
20 A
Transistor Material:
Si
Pin Count:
8
RoHs Compliant
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This is Dual N-Channel MOSFET 20 A 55 V 8-Pin TDSON manufactured by Infineon. The manufacturer part number is IPG20N06S2L65AATMA1. It has a maximum of 55 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.2v of maximum gate threshold voltage. It provides up to 0.065 ω maximum drain source resistance. The package is a sort of tdson. It consists of 2 elements per chip. While 20 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 8 pins.

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Datasheet - IPG20N06S2L65AATMA1(Technical Reference)

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