Dual N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON

Enrgtech Part No: ET21634947
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Manufacturer Part No:
IPG20N06S2L65AATMA1
|
Manufacturer: Infineon

IPG20N06S2L65AATMA1 Dual N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON

Product Information

Maximum Drain Source Voltage:

55 V

Mounting Type:

Surface Mount

Channel Mode:

Enhancement

Series:

OptiMOS™

Channel Type:

Maximum Gate Threshold Voltage:

2.2V

Maximum Drain Source Resistance:

0.065 Ω

Package Type:

TDSON

Number of Elements per Chip:

Maximum Continuous Drain Current:

20 A

Transistor Material:

Pin Count:

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This is Dual N-Channel MOSFET 20 A 55 V 8-Pin TDSON manufactured by Infineon. The manufacturer part number is IPG20N06S2L65AATMA1. It has a maximum of 55 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.2v of maximum gate threshold voltage. It provides up to 0.065 ω maximum drain source resistance. The package is a sort of tdson. It consists of 2 elements per chip. While 20 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 8 pins.

Datasheet - IPG20N06S2L65AATMA1(Technical Reference)

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Dual N-Channel MOSFET, 20 A, 55 V, 8-Pin TDSON

IPG20N06S2L65AATMA1

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