N-Channel MOSFET, 46 A, 650 V, 3-Pin D2PAK Infineon IPB65R045C7ATMA2

IPB65R045C7ATMA2 N-Channel MOSFET, 46 A, 650 V, 3-Pin D2PAK Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
650 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
CoolMOS™ P7
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
45 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
46 A
Transistor Material:
Si
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 46 A 650 V 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB65R045C7ATMA2. It has a maximum of 650 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product coolmos™ p7, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 45 mω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. While 46 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.

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Datasheet - IPB65R045C7ATMA2(Technical Reference)

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