N-Channel MOSFET, 18 A, 650 V, 3-Pin TO-220 FullPAK Wide Creepage Infineon IPB60R040CFD7ATMA1

IPB60R040CFD7ATMA1 N-Channel MOSFET, 18 A, 650 V, 3-Pin TO-220 FullPAK Wide Creepage Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
650 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
CoolMOS™
Channel Type:
N
Maximum Gate Threshold Voltage:
4.5V
Maximum Drain Source Resistance:
180 mΩ
Package Type:
TO-220 FP
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
18 A
Transistor Material:
Si
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 18 A 650 V 3-Pin TO-220 FullPAK Wide Creepage manufactured by Infineon. The manufacturer part number is IPB60R040CFD7ATMA1. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product coolmos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.5v of maximum gate threshold voltage. It provides up to 180 mω maximum drain source resistance. The package is a sort of to-220 fp. It consists of 1 elements per chip. While 18 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.

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Datasheet - IPB60R040CFD7ATMA1(Technical Reference)

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