N-Channel MOSFET, 36 A, 1200 V, 3-Pin PG-TO247-3 Infineon IMW120R060M1HXKSA1

IMW120R060M1HXKSA1 N-Channel MOSFET, 36 A, 1200 V, 3-Pin PG-TO247-3 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
1200 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
IMW1
Channel Type:
N
Maximum Gate Threshold Voltage:
4.5V
Maximum Drain Source Resistance:
60 mΩ
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
36 A
Transistor Material:
Si
Pin Count:
3
RoHs Compliant
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This is N-Channel MOSFET 36 A 1200 V 3-Pin PG-TO247-3 manufactured by Infineon. The manufacturer part number is IMW120R060M1HXKSA1. It has a maximum of 1200 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product imw1, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.5v of maximum gate threshold voltage. It provides up to 60 mω maximum drain source resistance. The package is a sort of to-247. It consists of 1 elements per chip. While 36 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.

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Datasheet - IMW120R060M1HXKSA1(Technical Reference)

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