N-Channel MOSFET, 250 A, 1200 V AG-62MM Infineon FF6MR12KM1BOSA1

FF6MR12KM1BOSA1 N-Channel MOSFET, 250 A, 1200 V AG-62MM Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
1200 V
Channel Mode:
Enhancement
Mounting Type:
Screw Mount
Series:
FF6MR
Channel Type:
N
Maximum Gate Threshold Voltage:
3.45V
Package Type:
AG-62MM
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
250 A
Maximum Drain Source Resistance:
5.81 mΩ
RoHs Compliant
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This is N-Channel MOSFET 250 A 1200 V AG-62MM manufactured by Infineon. The manufacturer part number is FF6MR12KM1BOSA1. It has a maximum of 1200 v drain source voltage. The product carries enhancement channel mode. The product is available in screw mount configuration. The product ff6mr, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.45v of maximum gate threshold voltage. The package is a sort of ag-62mm. It consists of 1 elements per chip. While 250 a of maximum continuous drain current. It provides up to 5.81 mω maximum drain source resistance.

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Datasheet - FF6MR12KM1BOSA1(Technical Reference)

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