Silicon N-Channel MOSFET, 557 A, 40 V, 7-Pin D2PAK-7Pin Infineon IRL40SC228

IRL40SC228 Silicon N-Channel MOSFET, 557 A, 40 V, 7-Pin D2PAK-7Pin Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
40 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
HEXFET
Channel Type:
N
Maximum Gate Threshold Voltage:
2.4V
Maximum Drain Source Resistance:
0.00065 Ω
Package Type:
D2PAK-7
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
557 A
Transistor Material:
Silicon
Pin Count:
7
RoHs Compliant
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This is Silicon N-Channel MOSFET 557 A 40 V 7-Pin D2PAK-7Pin manufactured by Infineon. The manufacturer part number is IRL40SC228. It has a maximum of 40 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product hexfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.4v of maximum gate threshold voltage. It provides up to 0.00065 ω maximum drain source resistance. The package is a sort of d2pak-7. It consists of 1 elements per chip. While 557 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 7 pins.

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Datasheet - IRL40SC228(Technical Reference)

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