Silicon N-Channel MOSFET, 30 A, 80 V, 4-Pin PQFN 5mm x 6mm Infineon IRFH8311TRPBF

IRFH8311TRPBF Silicon N-Channel MOSFET, 30 A, 80 V, 4-Pin PQFN 5mm x 6mm Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
80 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
HEXFET
Channel Type:
N
Maximum Gate Threshold Voltage:
2.35V
Maximum Drain Source Resistance:
0.0021 Ω
Package Type:
PQFN 5 x 6
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
30 A
Transistor Material:
Silicon
Pin Count:
4
RoHs Compliant
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This is Silicon N-Channel MOSFET 30 A 80 V 4-Pin PQFN 5mm x 6mm manufactured by Infineon. The manufacturer part number is IRFH8311TRPBF. It has a maximum of 80 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product hexfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.35v of maximum gate threshold voltage. It provides up to 0.0021 ω maximum drain source resistance. The package is a sort of pqfn 5 x 6. It consists of 1 elements per chip. While 30 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 4 pins.

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Datasheet - IRFH8311TRPBF(Technical Reference)

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You will get a confirmation email regarding your order of Silicon N-Channel MOSFET, 30 A, 80 V, 4-Pin PQFN 5mm x 6mm Infineon IRFH8311TRPBF. You can also check on our website or by contacting our customer support team for further order details on Silicon N-Channel MOSFET, 30 A, 80 V, 4-Pin PQFN 5mm x 6mm Infineon IRFH8311TRPBF.
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