Silicon N-Channel MOSFET, 32 A, 30 V DirectFET ISOMETRIC Infineon IRF6726MTRPBF

IRF6726MTRPBF Silicon N-Channel MOSFET, 32 A, 30 V DirectFET ISOMETRIC Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
30 V
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Series:
HEXFET
Channel Type:
N
Maximum Gate Threshold Voltage:
2.35V
Package Type:
DirectFET ISOMETRIC
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
32 A
Transistor Material:
Silicon
Maximum Drain Source Resistance:
0.0024 Ω
RoHs Compliant
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This is Silicon N-Channel MOSFET 32 A 30 V DirectFET ISOMETRIC manufactured by Infineon. The manufacturer part number is IRF6726MTRPBF. It has a maximum of 30 v drain source voltage. The product carries enhancement channel mode. The product is available in surface mount configuration. The product hexfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.35v of maximum gate threshold voltage. The package is a sort of directfet isometric. It consists of 1 elements per chip. While 32 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It provides up to 0.0024 ω maximum drain source resistance.

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Datasheet - IRF6726MTRPBF(Technical Reference)

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