Silicon N-Channel MOSFET, 81 A, 20 V DirectFET OMETRIC Infineon IRF6636TRPBF
Product Information
Maximum Drain Source Voltage:
20 V
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Series:
HEXFET
Channel Type:
N
Maximum Gate Threshold Voltage:
2.45V
Package Type:
DirectFET ISOMETRIC
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
81 A
Transistor Material:
Silicon
Maximum Drain Source Resistance:
0.0064 Ω
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FAQs
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Yes. Our products in MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Silicon N-Channel MOSFET, 81 A, 20 V DirectFET OMETRIC Infineon IRF6636TRPBF. You can also check on our website or by contacting our customer support team for further order details on Silicon N-Channel MOSFET, 81 A, 20 V DirectFET OMETRIC Infineon IRF6636TRPBF.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET21632838 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Infineon" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21632838.
Yes. We ship IRF6636TRPBF Internationally to many countries around the world.
This is Silicon N-Channel MOSFET 81 A 20 V DirectFET OMETRIC manufactured by Infineon. The manufacturer part number is IRF6636TRPBF. It has a maximum of 20 v drain source voltage. The product carries enhancement channel mode. The product is available in surface mount configuration. The product hexfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.45v of maximum gate threshold voltage. The package is a sort of directfet isometric. It consists of 1 elements per chip. While 81 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It provides up to 0.0064 ω maximum drain source resistance.
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