Silicon N-Channel MOSFET, 33 A, 700 V, 4-Pin PG-TO 247-4 Infineon IPZ65R065C7XKSA1

IPZ65R065C7XKSA1 Silicon N-Channel MOSFET, 33 A, 700 V, 4-Pin PG-TO 247-4 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
700 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
CoolMOS™
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.065 Ω
Package Type:
TO-247-4
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
33 A
Transistor Material:
Silicon
Pin Count:
4
RoHs Compliant
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This is Silicon N-Channel MOSFET 33 A 700 V 4-Pin PG-TO 247-4 manufactured by Infineon. The manufacturer part number is IPZ65R065C7XKSA1. It has a maximum of 700 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product coolmos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.065 ω maximum drain source resistance. The package is a sort of to-247-4. It consists of 1 elements per chip. While 33 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 4 pins.

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Datasheet - IPZ65R065C7XKSA1(Technical Reference)

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