Silicon N-Channel MOSFET, 8.5 A, 700 V, 3-Pin PG-TO 251 Infineon IPSA70R600P7SAKMA1

IPSA70R600P7SAKMA1 Silicon N-Channel MOSFET, 8.5 A, 700 V, 3-Pin PG-TO 251 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
700 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
CoolMOS™
Channel Type:
N
Maximum Gate Threshold Voltage:
3.5V
Maximum Drain Source Resistance:
0.6 Ω
Package Type:
IPAK (TO-251)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
8.5 A
Transistor Material:
Silicon
Pin Count:
3
RoHs Compliant
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This is Silicon N-Channel MOSFET 8.5 A 700 V 3-Pin PG-TO 251 manufactured by Infineon. The manufacturer part number is IPSA70R600P7SAKMA1. It has a maximum of 700 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product coolmos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.5v of maximum gate threshold voltage. It provides up to 0.6 ω maximum drain source resistance. The package is a sort of ipak (to-251). It consists of 1 elements per chip. While 8.5 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 3 pins.

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Datasheet - IPSA70R600P7SAKMA1(Technical Reference)

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