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This is Silicon N-Channel MOSFET 60 A 100 V 3-Pin PG-TO252-3-313 manufactured by Infineon. The manufacturer part number is IPD60N10S4L12ATMA1. It has a maximum of 100 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2.1v of maximum gate threshold voltage. It provides up to 0.012 ω maximum drain source resistance. The package is a sort of to-252. It consists of 1 elements per chip. While 60 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 3 pins.
For more information please check the datasheets.
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