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This is Silicon N-Channel MOSFET 30 A 55 V 3-Pin PG-TO252-3-11 manufactured by Infineon. The manufacturer part number is IPD30N06S215ATMA2. It has a maximum of 55 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.0147 ω maximum drain source resistance. The package is a sort of to-252. It consists of 1 elements per chip. While 30 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 3 pins.
For more information please check the datasheets.
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