Silicon N-Channel MOSFET, 70 A, 40 V, 8-Pin PG-TDSON-8-33 Infineon IPC70N04S5L4R2ATMA1

IPC70N04S5L4R2ATMA1 Silicon N-Channel MOSFET, 70 A, 40 V, 8-Pin PG-TDSON-8-33 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
40 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
OptiMOS™
Channel Type:
N
Maximum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
0.0042 Ω
Package Type:
SuperSO8 5 x 6
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
70 A
Transistor Material:
Silicon
Pin Count:
8
RoHs Compliant
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This is Silicon N-Channel MOSFET 70 A 40 V 8-Pin PG-TDSON-8-33 manufactured by Infineon. The manufacturer part number is IPC70N04S5L4R2ATMA1. It has a maximum of 40 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2v of maximum gate threshold voltage. It provides up to 0.0042 ω maximum drain source resistance. The package is a sort of superso8 5 x 6. It consists of 1 elements per chip. While 70 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 8 pins.

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Datasheet - IPC70N04S5L4R2ATMA1(Technical Reference)

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