This is Silicon N-Channel MOSFET 37.9 A 650 V 3-Pin PG-TO 220 FullPAK manufactured by Infineon. The manufacturer part number is IPA60R099P6XKSA1. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product coolmos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.5v of maximum gate threshold voltage. It provides up to 0.099 ω maximum drain source resistance. The package is a sort of to-220 fp. It consists of 1 elements per chip. While 37.9 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 3 pins.
Datasheet - IPA60R099P6XKSA1(Technical Reference)
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This is Silicon N-Channel MOSFET 37.9 A 650 V 3-Pin PG-TO 220 FullPAK manufactured by Infineon. The manufacturer part number is IPA60R099P6XKSA1. It has a maximum of 650 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product coolmos™, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.5v of maximum gate threshold voltage. It provides up to 0.099 ω maximum drain source resistance. The package is a sort of to-220 fp. It consists of 1 elements per chip. While 37.9 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 3 pins.
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