Silicon N-Channel MOSFET, 12.5 A, 600 V, 8-Pin PG-HSOF-8-3 Infineon IGT60R190D1SATMA1

IGT60R190D1SATMA1 Silicon N-Channel MOSFET, 12.5 A, 600 V, 8-Pin PG-HSOF-8-3 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
600 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
CoolGaN
Channel Type:
N
Maximum Gate Threshold Voltage:
1.6V
Maximum Drain Source Resistance:
0.19 Ω
Package Type:
HSOF-8
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
12.5 A
Transistor Material:
Silicon
Pin Count:
8
RoHs Compliant
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This is Silicon N-Channel MOSFET 12.5 A 600 V 8-Pin PG-HSOF-8-3 manufactured by Infineon. The manufacturer part number is IGT60R190D1SATMA1. It has a maximum of 600 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product coolgan, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 1.6v of maximum gate threshold voltage. It provides up to 0.19 ω maximum drain source resistance. The package is a sort of hsof-8. It consists of 1 elements per chip. While 12.5 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 8 pins.

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Datasheet - IGT60R190D1SATMA1(Technical Reference)

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