Silicon N-Channel MOSFET, 20 A, 30 V, 8-Pin PG-WISON-8 Infineon BSZ0909NDXTMA1

BSZ0909NDXTMA1 Silicon N-Channel MOSFET, 20 A, 30 V, 8-Pin PG-WISON-8 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
30 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
OptiMOSTM3
Channel Type:
N
Maximum Gate Threshold Voltage:
2V
Maximum Drain Source Resistance:
0.018 Ω
Package Type:
PG-WISON-8
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
20 A
Transistor Material:
Silicon
Pin Count:
8
RoHs Compliant
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This is Silicon N-Channel MOSFET 20 A 30 V 8-Pin PG-WISON-8 manufactured by Infineon. The manufacturer part number is BSZ0909NDXTMA1. It has a maximum of 30 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product optimostm3, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 2v of maximum gate threshold voltage. It provides up to 0.018 ω maximum drain source resistance. The package is a sort of pg-wison-8. It consists of 1 elements per chip. While 20 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 8 pins.

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Datasheet - BSZ0909NDXTMA1(Technical Reference)

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You will get a confirmation email regarding your order of Silicon N-Channel MOSFET, 20 A, 30 V, 8-Pin PG-WISON-8 Infineon BSZ0909NDXTMA1. You can also check on our website or by contacting our customer support team for further order details on Silicon N-Channel MOSFET, 20 A, 30 V, 8-Pin PG-WISON-8 Infineon BSZ0909NDXTMA1.
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